无扭结模拟电路设计与浮体NFD/SOI CMOS:电流转向D-A转换器

D. Chang, J. Fossum, S. Reynolds, M. Pelella
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引用次数: 3

摘要

只提供摘要形式。基于SOI的mosfet在RF (>1 GHz)应用中产生了卓越的性能,主要是因为底层氧化物提供了固有的器件隔离。然而,由于受扭结效应的影响,浮体(FB)非完全耗尽(NFD) SOI MOSFET尚未被认真考虑作为模拟电路的选择。在本文中,我们提出了一种确保FB-NFD/SOI模拟电路无扭结运行的新方法,并将其用于10位电流转向D-A转换器(DAC)的设计。SOISPICE-4.4,其器件模型升级和改进用于高频模拟应用,用于模拟DAC并验证设计方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Kink-free analog circuit design with floating-body NFD/SOI CMOS: a current-steering D-A converter
Summary form only given. MOSFETs built on SOI have yielded superior performance in RF (>1 GHz) applications mainly because of the inherent device isolation afforded by the underlying oxide. However, the floating-body (FB) non-fully depleted (NFD) SOI MOSFET has not been seriously considered as an option for analog circuits since it suffers from the kink effect. In this paper, we present a novel approach to ensure kink-free operation of FB-NFD/SOI analog circuits, using it in the design of a 10-bit current-steering D-A Converter (DAC). SOISPICE-4.4, with its device models upgraded and refined for high-frequency analog applications, is used to simulate the DAC and verify the design approach.
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