一个3 V电源电压，DC-18 GHz sigehbt宽带放大器

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493895

H. Schumacher, A. Gruhle, U. Erben, H. Kibbel, U. Konig

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引用次数: 13

摘要

我们报道了一种使用SiGe异质结双极晶体管的宽带，低功耗单片放大器，在50 mW功耗下，从直流到18 GHz提供9.5 dB增益，噪声系数为5.3 dB。1.6 V工作是可能的，带宽略微降低到15 GHz，功耗低于20 mW。

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A 3 V supply voltage, DC-18 GHz SiGe HBT wideband amplifier

We report a wideband, low power consumption monolithic amplifier using SiGe heterojunction bipolar transistors which, at 50 mW power consumption, provides 9.5 dB of gain from DC through 18 GHz, with 5.3 dB noise figure. 1.6 V operation is possible with slight bandwidth reduction to 15 GHz, and less than 20 mW power consumption.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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