替代金属栅极(RMG) p- finet中漏极偏置和自热效应下NBTI影响的TCAD评估框架

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241639

Uma Sharma, S. Mahapatra

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引用次数: 2

摘要

Sentaurus TCAD能够在漏极偏置(VD)和自加热(SH)效应下的负偏置温度不稳定性(NBTI)期间计算界面陷阱生成($\Delta N_{IT}$)。用纯NBTI (VD=0V)实验数据对该装置进行了标定，并进一步用于测定热载流子降解(HCD)应力下NBTI的成分。这种NBTI和HCD的分解在多翅片长度(FL) p- finfet上进行了演示，以模拟不同$VG/VD$应力下的HCD实验数据。

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A TCAD Framework for Assessing NBTI Impact Under Drain Bias and Self-Heating Effects in Replacement Metal Gate (RMG) p-FinFETs

Sentaurus TCAD is enabled to calculate interface trap generation ($\Delta N_{IT}$) during Negative Bias Temperature Instability (NBTI) under drain bias (VD) and self-heating (SH) effects. The setup is calibrated with pure NBTI (VD=0V) experimental data, and is further used to determine the NBTI component during Hot Carrier Degradation (HCD) stress. Such decomposition of NBTI and HCD is demonstrated for multiple fin length (FL) p-FinFETs to model HCD experimental data at different $VG/VD$ stress.

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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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