H. Chiu, T. Lin, P. Chang, W. Lee, C. Chiang, J. Kwo, Y. Lin, S. Hsu, W. Tsai, M. Hong
{"title":"以ALD-Al2O3和MBE-Al2O3/Ga2O3(Gd2O3)为栅极介质的自对准反转通道In0.53Ga0.47As n - mosfet","authors":"H. Chiu, T. Lin, P. Chang, W. Lee, C. Chiang, J. Kwo, Y. Lin, S. Hsu, W. Tsai, M. Hong","doi":"10.1109/VTSA.2009.5159329","DOIUrl":null,"url":null,"abstract":"Self-aligned inversion-channel In<inf>0.53</inf>Ga<inf>0.47</inf>As n-MOSFETs with ex-situ atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and in-situ ultra-high-vacuum deposited Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non de-embedded current gain cutoff frequency (fT) and maximum oscillation frequency (f<inf>max</inf>) of ∼ 3.1 and 1.1 GHz (ALD-Al<inf>2</inf>O<inf>3</inf>) and of ∼ 17.9 and 11.2 GHz (MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)), respectively, have been obtained.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics\",\"authors\":\"H. Chiu, T. Lin, P. Chang, W. Lee, C. Chiang, J. Kwo, Y. Lin, S. Hsu, W. Tsai, M. Hong\",\"doi\":\"10.1109/VTSA.2009.5159329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Self-aligned inversion-channel In<inf>0.53</inf>Ga<inf>0.47</inf>As n-MOSFETs with ex-situ atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and in-situ ultra-high-vacuum deposited Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non de-embedded current gain cutoff frequency (fT) and maximum oscillation frequency (f<inf>max</inf>) of ∼ 3.1 and 1.1 GHz (ALD-Al<inf>2</inf>O<inf>3</inf>) and of ∼ 17.9 and 11.2 GHz (MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)), respectively, have been obtained.\",\"PeriodicalId\":309622,\"journal\":{\"name\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2009.5159329\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
Self-aligned inversion-channel In0.53Ga0.47As n-MOSFETs with ex-situ atomic-layer-deposited Al2O3 and in-situ ultra-high-vacuum deposited Al2O3/Ga2O3(Gd2O3) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non de-embedded current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) of ∼ 3.1 and 1.1 GHz (ALD-Al2O3) and of ∼ 17.9 and 11.2 GHz (MBE-Al2O3/Ga2O3(Gd2O3)), respectively, have been obtained.
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