快速热加工中少量氧气对65 nm栅长水化钴的影响

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. Pub Date : 1900-01-01 DOI:10.1109/IWJT.2002.1225208

Y. Kanda, M. Ogura, K. Honda, S. Tsutsumi, K. Maekawa, K. Kobayashi, M. Yoneda

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引用次数: 1

摘要

水化钴工艺的主要问题是难以在窄线宽下获得低片电阻。在本工作中，我们研究了快速热加工(RTP)室氧浓度与CMOS器件中硅化钴电性能的关系。研究发现，在RTP系统的腔室中，少量的氧气(25 ppm)会导致62 nm栅极长度的CoSi/sub 2//多晶硅栅极失效。

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Influence of a small amount of oxygen during rapid thermal processing on cobalt salicide at 65 nm gate length

The main issue in cobalt salicide process is the difficulty of obtaining low sheet resistances at narrow line width. In the present work, we have studied the relationship between oxygen concentration in rapid thermal processing (RTP) chamber and the electrical properties of cobalt silicide in CMOS devices. It is found that failures of CoSi/sub 2//poly-Si gate electrodes with 62 nm gate length are induced by a small amount of oxygen (25 ppm) in the chamber of RTP system.

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Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.

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