在汽车应用的5V BiCMOS工艺中实现60V容限双向ESD保护

2004 Electrical Overstress/Electrostatic Discharge Symposium Pub Date : 2004-09-01 DOI:10.1109/EOSESD.2004.5272623

V. Vashchenko, W. Kindt, M. ter Beek, P. Hopper

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引用次数: 14

摘要

针对汽车应用电路中薄膜电阻器的60 V容限片上保护问题，提出了一种双向ESD保护方法。提出了一种提高阻塞n隔离层击穿电压的新方法，并通过工艺和器件数值模拟以及实验测量进行了验证。

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Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application

A dual-direction ESD protection approach is applied to the problem of 60 V tolerant on-chip protection of the thin film resistors in automotive application circuits realized in 5 V BiCMOS process. A novel method for increasing the breakdown voltage of a blocked N-isolation layer is proposed and validated using process and device numerical simulation followed by experimental measurements.

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2004 Electrical Overstress/Electrostatic Discharge Symposium

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