RF蚀刻预清洁对低k SiLK IMD PVD Al填充的影响

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854304

Su-Keon Lee, M. Chae, Heongsoo Kim, Taek-Gi Kim, Sibum Kim, Chung-Tae Kim, J. Hwang

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引用次数: 0

摘要

研究了PVD铝金属化与低k丝介电体的集成问题。在射频腐蚀预清洗步骤中，为了去除孔结构中Al线上形成的AlOx层，对丝高分子材料造成了严重的破坏。降解后的丝表面对Ti和Al膜的织构产生强烈的影响，并在通过侧壁沉积薄Al膜时促进了团聚。在优化的射频腐蚀条件下，提高了铝的填充能力。

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RF etch pre-clean effect on PVD Al filling with low k SiLK IMD

A issue related with the integration of PVD Al metallization with low k SiLK dielectrics was investigated. SiLK polymer material was severely damaged during RF etch pre-clean step which was performed to remove the AlOx layer formed on Al line in via structure. The degraded SiLK surface affected strongly the texture of Ti and Al film and then promoted the agglomeration when thin Al film was deposited on via side wall. The improvement of Al filling ability was carried out with the optimized RF etch condition.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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