基于纳米级CMOS技术的SRAM设计(特邀)

Kevin Zhang, E. Karl, Yih Wang
{"title":"基于纳米级CMOS技术的SRAM设计(特邀)","authors":"Kevin Zhang, E. Karl, Yih Wang","doi":"10.1109/VLSIT.2012.6242473","DOIUrl":null,"url":null,"abstract":"SRAM scaling has become increasingly challenging in meeting both power and density requirements. Critical circuit technologies along with key process advancement are discussed in enabling SRAM scaling to continue to follow Moore's law well into the future.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"SRAM design in nano-scale CMOS technologies (Invited)\",\"authors\":\"Kevin Zhang, E. Karl, Yih Wang\",\"doi\":\"10.1109/VLSIT.2012.6242473\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SRAM scaling has become increasingly challenging in meeting both power and density requirements. Critical circuit technologies along with key process advancement are discussed in enabling SRAM scaling to continue to follow Moore's law well into the future.\",\"PeriodicalId\":266298,\"journal\":{\"name\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2012.6242473\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

SRAM扩展在满足功率和密度要求方面变得越来越具有挑战性。讨论了关键电路技术以及关键工艺进步,以使SRAM缩放在未来继续遵循摩尔定律。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SRAM design in nano-scale CMOS technologies (Invited)
SRAM scaling has become increasingly challenging in meeting both power and density requirements. Critical circuit technologies along with key process advancement are discussed in enabling SRAM scaling to continue to follow Moore's law well into the future.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信