存储技术的转型

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210112

Sangbum Kim, C. Lam

{"title":"存储技术的转型","authors":"Sangbum Kim, C. Lam","doi":"10.1109/VLSI-TSA.2012.6210112","DOIUrl":null,"url":null,"abstract":"Historically, transition of memory technologies has been enabled by not only disruptive new features of the memory technology but also new applications which proved the core value of those new features. As improvement of prevalent memory technologies is becoming more challenging, many resources have been devoted to development of emerging memory technologies. In this regard, characteristics of emerging memory technologies such as PCM, STT-MRAM, and RRAM will be reviewed to evaluate its potential of becoming transformational memory technology.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Transition of memory technologies\",\"authors\":\"Sangbum Kim, C. Lam\",\"doi\":\"10.1109/VLSI-TSA.2012.6210112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Historically, transition of memory technologies has been enabled by not only disruptive new features of the memory technology but also new applications which proved the core value of those new features. As improvement of prevalent memory technologies is becoming more challenging, many resources have been devoted to development of emerging memory technologies. In this regard, characteristics of emerging memory technologies such as PCM, STT-MRAM, and RRAM will be reviewed to evaluate its potential of becoming transformational memory technology.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

从历史上看，内存技术的转型不仅是由内存技术的颠覆性新功能实现的，而且是由证明这些新功能核心价值的新应用实现的。随着现有存储技术的改进变得越来越具有挑战性，许多资源被投入到新兴存储技术的开发中。在这方面，新兴的存储技术，如PCM, STT-MRAM和RRAM的特点将被审查，以评估其成为变革性存储技术的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Transition of memory technologies

Historically, transition of memory technologies has been enabled by not only disruptive new features of the memory technology but also new applications which proved the core value of those new features. As improvement of prevalent memory technologies is becoming more challenging, many resources have been devoted to development of emerging memory technologies. In this regard, characteristics of emerging memory technologies such as PCM, STT-MRAM, and RRAM will be reviewed to evaluate its potential of becoming transformational memory technology.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of Technical Program of 2012 VLSI Technology, System and Application

自引率

0.00%

发文量