40 nm双阱和三阱体CMOS sram中电荷约束和角冲击的影响

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241845

I. Chatterjee, B. Bhuva, peixiong zhao, B. Narasimham, J. K. Wang, B. Bartz, E. Pitta, M. Buer

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引用次数: 7

摘要

比较了双孔和三孔40 nm CMOS sram中重离子诱导的扰动。三阱结构中的电荷约束触发了高LET粒子的单事件扰动反转机制。由于翻转，高LET离子在非正常角度入射时，与正常入射的离子相比，三孔SRAM电池的SER下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of charge confinement and angular strikes in 40 nm dual- and triple-well bulk CMOS SRAMs

Heavy-ion induced upsets are compared in dual-well and triple-well 40 nm CMOS SRAMs. Charge confinement in triple-well structures triggers the single-event upset reversal mechanism for high LET particles. Due to upset reversal, high LET ion-hits incident at off-normal angles show a decrease in SER compared to normally-incident ions for triple-well SRAM cells.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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