界面状态对1T-FBRAM细胞保留的影响

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241918

M. Aoulaiche, N. Collaert, P. Blomme, E. Simoen, L. Altimime, G. Groeseneken, M. Jurczak, L. Mendes Almeida, C. Caillat, N. Mahatme

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引用次数: 5

摘要

在这项工作中，研究了1T-RAM UTBOX SOI设备的保留。结果表明，硅导带以下0.3eV处的界面缺陷是导致保持时间短的主要原因。通过假设孔洞通过界面状态产生的模型再现了所测得的保留时间和动力学。

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Effect of interface states on 1T-FBRAM cell retention

In this work, the retention of 1T-RAM UTBOX SOI devices is investigated. It is found that the interface defects at 0.3eV below the Si conduction band are responsible for the short retention times. The measured retention time and kinetics are reproduced by a model assuming hole generation via interface states.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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