超薄SOI表面选择性外延生长低压退火过程中的迁移抑制

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. Pub Date : 1900-01-01 DOI:10.1109/IWJT.2002.1225205

I. Mizushima, T. Sato, K. Miyano, Y. Tsunashima

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引用次数: 0

摘要

本文讨论了超薄SOI选择性外延生长低压退火过程中对迁移的抑制。通过控制氢气退火的压力和温度，提出了一种既能抑制迁移又能去除天然氧化物的新工艺序列。该工艺已成功应用于超薄SOI晶圆上高架源漏结构的形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Suppression of migration during low pressure annealing for selective epitaxial growth on ultra-thin SOI

The paper deals about suppression of migration during low pressure annealing for selective epitaxial growth on ultra-thin SOI. The novel process sequence was proposed that satisfies both the suppression of the migration and the removal of native oxide by controlling the pressure and the temperature of hydrogen annealing. The proposed process was successfully applied for the formation of elevated source and drain structure fabricated on ultra-thin SOI wafer.

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Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.

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