水动力密度梯度模型的一种数值有效方法

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233687

Seonghoon Jin, Young-June Park, H. Min

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引用次数: 10

摘要

我们提出了一个量子输运模型，它是密度梯度模型的流体力学扩展。控制方程由维格纳分布函数的矩量导出，其形式适用于传统的器件仿真程序。采用控制体积法对模型进行离散化，并对电子和能量通量方程进行非线性离散化。我们还开发了Si/SiO/sub 2/界面的边界条件，其中包括电子波函数渗透到氧化物中，以获得更准确的C-V特性。作为应用，我们研究了一个25 nm的NMOSFET器件。与半经典模型相比，新模型预测栅极电容降低约20%，阈下斜率和DIBL分别增加约16%和46%。与密度梯度模型相比，由于非局部输运效应，导通电流增加了26%。

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A numerically efficient method for the hydrodynamic density-gradient model

We propose a quantum transport model that is a hydrodynamic extension of the density-gradient model. The governing equations are derived from the moments of the Wigner distribution function and their forms are suitable for the conventional device simulation program. The model is discretized by the control volume method with nonlinear discretizations for the electron and energy flux equations. We also developed a boundary condition for the Si/SiO/sub 2/ interface that includes the electron wavefunction penetration into the oxide to obtain more accurate C-V characteristics. As an application, we studied a 25 nm NMOSFET device. Compared with the semiclassical models, the new model predicts reduced gate capacitance about 20% and increased subthreshold slope and DIBL about 16% and 46% respectively. Compared with the density-gradient model, the on-current is increased up to 26% due to the nonlocal transport effect.

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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