一种调整HBT器件触发电压的简易方法

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452175

Liu Ji-zhi, Zhang Qunhao, Yang Kai, Zeng Yaohui, Liu Zhiwei

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引用次数: 2

摘要

HBT器件的触发电压对ESD保护非常重要。提出了一种调整SiGe异质结双极晶体管(HBT)器件触发电压的方法。仿真和实验结果表明，HBT的触发电压可以通过改变发射极结面积来简单地调节。

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A Simple Method of Adjusting Trigger Voltage of HBT Device for ESD Protection

The trigger voltage of the HBT device is important for ESD protection. A method of adjusting the trigger voltage of SiGe Heterojunction Bipolar Transistor (HBT) device is proposed in this paper. The simulation and experiment results show that the trigger voltage of HBT can be simply adjusted by varying the emitter junction area.

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2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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