基于CMOS后端工艺的金电极被动DNA传感器

F. Hofmann, A. Frey, B. Holzapfl, M. Schienle, C. Paulus, P. Schindler-Bauer, R. Thewes, R. Hintsche, E. Nebling, J. Albers, W. Gumbrecht
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引用次数: 16

摘要

在CMOS生产线上制造了一种DNA电检测传感器。金沉积工艺模块集成在CMOS后端工艺中。该传感器的原理是将单链DNA探针分子固定在由交错金线组成的阵列上,随后与标记的目标DNA链杂交。电信号产生于电化学氧化还原循环过程。在这种“被动”芯片的基础上进行了成功的DNA检测实验。这种无源排列代表了该原理扩展到在有源CMOS芯片上开发全电子DNA传感器阵列的测试运行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Passive DNA Sensor with Gold Electrodes Fabricated in a CMOS Backend Process
A sensor for electrical detection of DNA is fabricated in a CMOS production line. A gold deposition process module is integrated in a CMOS backend process. The sensor principle is based on immobilization of singlestranded DNA probe molecules on an array consisting of interdigitated gold lines and subsequent hybridization with labeled target DNA strands. The electrical signal results from an electrochemical redox cycling process. Successful DNA detection experiments on the basis of such ‘passive’ chips are performed. This passive arrangement represents a test run for the extension of this principle to develop fully electronic DNA sensor arrays on active CMOS chips.
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