1.2 kV 4H-SiC mosfet的成功开发，导通电阻为5 mΩcm2

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI:10.1109/ISPSD.2006.1666121

N. Miura, K. Fujihira, Y. Nakao, T. Watanabe, Y. Tarui, S. Kinouchi, M. Imaizumi, T. Oomori

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引用次数: 36

摘要

制备了微型化单晶结构的4H-SiC mosfet。采用薄膜沟道结构有效地改善了MOSFET的电学特性。在1.35 kV稳定的雪崩击穿下，成功地记录了5毫微米m2的比导通电阻。在150℃时，Ron,sp和Ron,sp的温度依赖性仍然很低，为8.5 mOmegacm2。将SiC- mosfet与SiC- sdd组合在一起实现原型SiC功率模块。与Si-IGBT/Si-FWD模块相比，采用SiC模块可显著降低开关能量损失。组装了由SiC模块组成的三相逆变电路，稳定驱动3.7 kW/400 V感应电机

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Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2

4H-SiC MOSFETs comprised of a miniaturized unit cell structure were fabricated. The epilayer channel configuration was employed to effectively improve the MOSFET electrical characteristics. A specific on-resistance of 5 mOmegacm2 with a stable avalanche breakdown of 1.35 kV was successfully recorded. Temperature dependence of the Ron,sp examined and the Ron,sp exhibited still low value of 8.5 mOmegacm2 at 150 degC . The SiC-MOSFETs were put together with SiC-SBDs to realize prototype SiC power modules. A switching energy loss was significantly reduced by employing the SiC module in comparison with a Si-IGBT/Si-FWD module. A three-phase inverter circuit consisted of the SiC module was assembled and stably drove a 3.7 kW/400 V induction motor

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2006 IEEE International Symposium on Power Semiconductor Devices and IC's

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