反向通道发射极开关晶闸管

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515003

A. Bhalla, T. Chow, K. So

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引用次数: 5

摘要

演示了一种550v，反向沟道发射极开关晶闸管(RECEST)。它提供易于晶闸管导通，低导通状态下降，优秀的寄生晶闸管锁存抗扰度和高最大可控电流密度。它的特性优于传统的发射极开关晶闸管和双侧通道发射极开关晶闸管，在高压应用中显示出良好的前景。

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RECEST: a reverse channel emitter switched thyristor

A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications.

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来源期刊

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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