{"title":"带有浮栅非均匀性补偿器的大面积印刷有机晶体管有源矩阵的电学和力学特性","authors":"T. Sekitani, T. Yokota, T. Tokuhara, T. Someya","doi":"10.1109/ICMTS.2013.6528165","DOIUrl":null,"url":null,"abstract":"In this paper, we report the testing of the performance variations in a large-scale, printed, ultraflexible organic transistor active matrix on a 10-μm thin-film plastic substrate. A printed active matrix comprising printed floating gate organic transistors has been manufactured using high-definition screen-printing and inkjet-printing. Furthermore, by applying feedback control to the threshold voltages of the floating gate organic transistors, the circuit can be made to compensate for the device-to-device nonuniformity, which is less than 5%. The mechanical characteristics of the printed transistors are also evaluated. As a 10-μm thin film is used as the substrate, critical bending radii of less than 0.5 mm are achieved.","PeriodicalId":142589,"journal":{"name":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and mechanical characterizations of a large-area, printed organic transistor active matrix with floating-gate-based nonuniformity compensator\",\"authors\":\"T. Sekitani, T. Yokota, T. Tokuhara, T. Someya\",\"doi\":\"10.1109/ICMTS.2013.6528165\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the testing of the performance variations in a large-scale, printed, ultraflexible organic transistor active matrix on a 10-μm thin-film plastic substrate. A printed active matrix comprising printed floating gate organic transistors has been manufactured using high-definition screen-printing and inkjet-printing. Furthermore, by applying feedback control to the threshold voltages of the floating gate organic transistors, the circuit can be made to compensate for the device-to-device nonuniformity, which is less than 5%. The mechanical characteristics of the printed transistors are also evaluated. As a 10-μm thin film is used as the substrate, critical bending radii of less than 0.5 mm are achieved.\",\"PeriodicalId\":142589,\"journal\":{\"name\":\"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2013.6528165\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2013.6528165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and mechanical characterizations of a large-area, printed organic transistor active matrix with floating-gate-based nonuniformity compensator
In this paper, we report the testing of the performance variations in a large-scale, printed, ultraflexible organic transistor active matrix on a 10-μm thin-film plastic substrate. A printed active matrix comprising printed floating gate organic transistors has been manufactured using high-definition screen-printing and inkjet-printing. Furthermore, by applying feedback control to the threshold voltages of the floating gate organic transistors, the circuit can be made to compensate for the device-to-device nonuniformity, which is less than 5%. The mechanical characteristics of the printed transistors are also evaluated. As a 10-μm thin film is used as the substrate, critical bending radii of less than 0.5 mm are achieved.