双能级金属集成中提高介质材料机械强度和减少潜在污染的新策略

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854291

M. Assous, Y. Morand, O. Demolliens, P. Berruyer, B. Manierre, Y. Gobil, D. Louis, H. Feldis, C. Vizioz, A. Roman

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引用次数: 0

摘要

为了提高介质材料的机械强度和减少介质材料的污染，本文研究了一种双大马士革Cu/低k集成的新策略。我们在SiLK(R)介电介质的双大马士革集成方案中引入了间隔层的概念。研究了两种用作间隔剂的材料:SiN和TiN。比较是基于形态学方面以及电CD和开尔文通过电阻测量不同的策略。

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New strategy to improve the mechanical strength and to reduce potential contamination of dielectric materials for double level metal integration

This work concerns a new strategy for dual damascene Cu/low k integration in order to improve the mechanical strength and to reduce the contamination of the dielectric materials. We introduce the spacer concept in the dual damascene integration scheme with SiLK(R) dielectric. Two materials have been studied as spacers: SiN and TiN. The comparison is based on morphological aspects as well as electrical CD and Kelvin via resistance measurements for different strategies.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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