p-FinFETs with Al segregated NiSi/p+-Si source/drain contact junction for series resistance reduction

This paper demonstrates the integration of Al segregated NiSi/p⁺-Si S/D contact junction in p-FinFETs for parasitic series resistance reduction. Al is introduced by ion implant into p⁺ S/D region followed by nickel deposition and silicidation. Drive current enhancement of ∼15 % is achieved without any degradation of short channel effects. This is attributed to the lowering of ΦB^p of NiSi on p-Si from 0.4 eV to 0.12 eV with low Al dose of 2×10¹⁴ atoms-cm⁻², leading to lowering of contact resistance at NiSi/p⁺-Si S/D junction.