{"title":"内置电流传感器在深亚微米CMOS IDDQ测试","authors":"T. Calin, L. Anghel, M. Nicolaidis","doi":"10.1109/VTEST.1999.766657","DOIUrl":null,"url":null,"abstract":"This paper describes results on Built-In Current Sensors (BICS) destined to overcome the limitations of I/sub DDQ/ testing in deep submicron circuits. The problems of performance penalty, test accuracy and test speed are addressed. A new sensor composed of a source-controlled comparator operating at low supply voltages and bias currents is used. Gradual sensor activation ensures reliable low noise operation. It is combined with large bypass MOS switches avoiding performance penalty, as well as a second bypass and compensation logic to increase test speed.","PeriodicalId":248104,"journal":{"name":"Proceedings 17th IEEE VLSI Test Symposium (Cat. No.PR00146)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Built-in current sensor for IDDQ testing in deep submicron CMOS\",\"authors\":\"T. Calin, L. Anghel, M. Nicolaidis\",\"doi\":\"10.1109/VTEST.1999.766657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes results on Built-In Current Sensors (BICS) destined to overcome the limitations of I/sub DDQ/ testing in deep submicron circuits. The problems of performance penalty, test accuracy and test speed are addressed. A new sensor composed of a source-controlled comparator operating at low supply voltages and bias currents is used. Gradual sensor activation ensures reliable low noise operation. It is combined with large bypass MOS switches avoiding performance penalty, as well as a second bypass and compensation logic to increase test speed.\",\"PeriodicalId\":248104,\"journal\":{\"name\":\"Proceedings 17th IEEE VLSI Test Symposium (Cat. No.PR00146)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 17th IEEE VLSI Test Symposium (Cat. No.PR00146)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTEST.1999.766657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 17th IEEE VLSI Test Symposium (Cat. No.PR00146)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTEST.1999.766657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Built-in current sensor for IDDQ testing in deep submicron CMOS
This paper describes results on Built-In Current Sensors (BICS) destined to overcome the limitations of I/sub DDQ/ testing in deep submicron circuits. The problems of performance penalty, test accuracy and test speed are addressed. A new sensor composed of a source-controlled comparator operating at low supply voltages and bias currents is used. Gradual sensor activation ensures reliable low noise operation. It is combined with large bypass MOS switches avoiding performance penalty, as well as a second bypass and compensation logic to increase test speed.