二维连续软栅氧化击穿研究的概念验证结构

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378063

B. Kaczer, R. Fernández, A. Nackaert, T. Chiarella, G. Groeseneken

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引用次数: 1

摘要

在本文中，我们描述了一个结构设计和制造的目的是定位连续的二维SBD。研究表明，对于累积(Degraeve et al.， 2001)和反演(Crupi et al.， 2005)，原始BD定位方法可以很容易地扩展到二维。结论是，两个连续的SBD的位置可以很容易地区分，随后的SBD事件在本工作的分析中似乎并不相关。还讨论了缩小结构的限制。

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Proof-of-Concept Structure for Investigation of Successive Soft Gate Oxide Breakdowns in Two Dimensions

In this paper we describe a structure designed and fabricated for the purpose of locating successive SBD's in 2D. It is shown that the original BD location method can be readily extended to 2D, for both accumulation (Degraeve et al., 2001) and inversion (Crupi et al., 2005). It is concluded that the locations of two successive SBD's can be readily distinguished and that subsequent SBD events do not appear to be correlated within the analysis of this work. Limitations in downscaling the structure are also discussed.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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