一种大面积、大功率IGBT模块无空洞焊接新工艺

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856845

J. Onuki, Y. Chonan, T. Komiyama, M. Nihei, R. Saitou, M. Suwa, M. Kitano

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引用次数: 4

摘要

研究了一种用于大面积、大功率IGBT模块中片上AlN衬底与金属衬底之间无空隙焊点的新工艺。下面的新流程包括两个步骤。首先用Ar/sup +/离子对金属和AlN基板上的镀Ni膜表面进行清洗，然后涂覆一层Ag薄膜，然后在503 K真空加热50min，然后在N/sub /气氛中冷却。使用此工艺，在高达130/spl次/190 mm/sup 2/的焊接区域中，空洞的面积百分比可以减少到0.2%以下。与H/sub - 2/工艺(以下简称H/sub - 2/工艺)的焊接方法相比，用该方法制成的焊点的疲劳寿命延长约3倍。

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A new void free soldering process in large-area, high power IGBT modules

A new void free process for the solder joint between a chip mounted AlN substrate and a metal substrate in large-area, high power IGBT modules has been investigated. The following new process consists of two steps. First, Ar/sup +/ ions were used to clean the surface of Ni plated films on the metal and AlN substrates by followed by coating with a thin Ag film, and secondly, 50 wt.% Pb-Sn solder sandwiched between the two substrates was heated in vacuum at 503 K for 5 min. and then cooled in a N/sub 2/ atmosphere. Using this process, the area percentage of voids in a soldering area up to 130/spl times/190 mm/sup 2/ can be reduced to less than 0.2%. The fatigue life time of solder joints made with this new method are found to be about 3 times longer than those by the soldering methods in H/sub 2/ (abbreviated as H/sub 2/ process hereafter).

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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