孔中碳纳米结构的电阻提取

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI:10.1109/ICMTS.2009.4814603

W. Wu, S. Krishnan, K. Li, Xuhui Sun, Raymond Wu, Toshishige Yamada, Cary Y. Yang

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引用次数: 2

摘要

本文介绍了一种电流传感技术，用于提取碳纳米结构在通孔互连中的电阻。为通孔应用设计和制造的测试结构包括嵌入二氧化硅(SiO2)的碳纳米纤维(CNF)-金属复合材料。使用原子力显微镜(AFM)对单个CNFs进行电学表征。该技术产生的金属-CNF接触电阻为6.4 k¿和最低的CNF电阻率为1.89e-4¿-cm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extracting Resistances of Carbon Nanostructures in Vias

This paper describes a current-sensing technique to extract the resistances of carbon nanostructures in via interconnects. Test structures designed and fabricated for via applications contain carbon nanofiber (CNF)-metal composites embedded in silicon dioxide (SiO2). Electrical characterization of single CNFs is performed using an atomic force microscope (AFM). This technique yields a metal-CNF contact resistance of 6.4 k¿ and a lowest CNF resistivity of 1.89e-4 ¿-cm.

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来源期刊

2009 IEEE International Conference on Microelectronic Test Structures

CiteScore

0.80

自引率

0.00%

发文量