Run-Hua Huang, Y. Tao, S. Bai, Gang Chen, Ling Wang, Rui Li, Yun Li, Zhifei Zhao
{"title":"1.2kV 4H-SiC DMOSFET的设计与制造","authors":"Run-Hua Huang, Y. Tao, S. Bai, Gang Chen, Ling Wang, Rui Li, Yun Li, Zhifei Zhao","doi":"10.1109/IFWS.2016.7803745","DOIUrl":null,"url":null,"abstract":"A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 6×10<sup>15</sup> cm<sup>−3</sup>. The devices were fabricated with a floating guard ring edge termination. The drain current Id = 10 A at Vg = 20 V, corresponding to Vd = 2.0 V.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and fabrication of 1.2kV 4H-SiC DMOSFET\",\"authors\":\"Run-Hua Huang, Y. Tao, S. Bai, Gang Chen, Ling Wang, Rui Li, Yun Li, Zhifei Zhao\",\"doi\":\"10.1109/IFWS.2016.7803745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 6×10<sup>15</sup> cm<sup>−3</sup>. The devices were fabricated with a floating guard ring edge termination. The drain current Id = 10 A at Vg = 20 V, corresponding to Vd = 2.0 V.\",\"PeriodicalId\":331453,\"journal\":{\"name\":\"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFWS.2016.7803745\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFWS.2016.7803745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 6×1015 cm−3. The devices were fabricated with a floating guard ring edge termination. The drain current Id = 10 A at Vg = 20 V, corresponding to Vd = 2.0 V.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
