一种sub-ns三端自旋轨道转矩感应开关装置

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573379

S. Fukami, T. Anekawa, Ayato Ohkawara, Chaoliang Zhang, H. Ohno

{"title":"一种sub-ns三端自旋轨道转矩感应开关装置","authors":"S. Fukami, T. Anekawa, Ayato Ohkawara, Chaoliang Zhang, H. Ohno","doi":"10.1109/VLSIT.2016.7573379","DOIUrl":null,"url":null,"abstract":"We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"A sub-ns three-terminal spin-orbit torque induced switching device\",\"authors\":\"S. Fukami, T. Anekawa, Ayato Ohkawara, Chaoliang Zhang, H. Ohno\",\"doi\":\"10.1109/VLSIT.2016.7573379\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573379\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573379","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 28

摘要

我们展示了一种三端自旋电子学存储器件，它可以通过0.5 ns的小幅度电流脉冲可靠地切换。采用了一种新的器件几何形状，其中自旋轨道扭矩用于写入操作。我们还表明，一种改进的结构可以实现无磁场开关，并且使用标准Ta以外的材料可以使开关电流减少一半以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A sub-ns three-terminal spin-orbit torque induced switching device

We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.

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2016 IEEE Symposium on VLSI Technology

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