−600V级垂直SiC p沟道MOSFET的UIS性能研究

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2019-05-01 DOI:10.1109/ISPSD.2019.8757607

Kailun Yao, H. Yano, N. Iwamuro

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引用次数: 5

摘要

垂直平面栅极4H-SiC p-ch SiC MOSFET是互补功率应用的潜在候选器件。通过测量和TCAD仿真研究了其无箝位电感开关(UIS)性能。由于端接结构未优化，p-ch SiC MOSFET的UIS性能较n-ch SiC MOSFET低。良好的边缘区域设计可以提高p-ch型MOSFET的usis性能。

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Investigation of UIS Capability for −600V Class Vertical SiC p-channel MOSFET

Vertical planar gate 4H-SiC p-ch SiC MOSFET is fabricated as a potential candidate for complementary power applications. Its unclamped inductive switching (UIS) capability is investigated by measurement and TCAD simulation. The p-ch SiC MOSFET shows a low UIS capability rather than n-ch SiC MOSFET because of the unoptimized termination structure. The UIS capability of p-ch MOSFET can be improved by good design of edge region.

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2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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