垂直NPN双极晶体管基底深体植入的研究

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI:10.1109/IEMT.2010.5746737

Changgui Tan, C. Siong, H. M. Reza, Hwang Chee Siang

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引用次数: 0

摘要

本文通过在垂直型NPN双极晶体管中置入不同倾斜角度的深体植入物，证明了其基极电阻的敏感性。垂直型NPN双极晶体管的基极电阻与硼植入体的倾斜角度密切相关。我们能够在不降低集电极和基极的电流增益和击穿电压的前提下，在0度的最佳倾角下提高早期电压(VEA)。

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A study of deep body implant into the base of Vertical NPN bipolar transistors

In this paper, we demonstrate the sensitivity of base resistance by different tilt angle of deep body implant into the base of Vertical NPN bipolar transistors. The base resistance in the vertical NPN bipolar transistors shows a strong dependency on the tilt angle of the boron implant from the deep body. We are able to improve the Early voltage (VEA) without degrading the current gain and breakdown voltage of collector and base on an optimal tilt angle of 0 degree.

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2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)

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