22纳米节点未来气隙架构的性能预测

M. Gallitre, L. Gosset, A. Farcy, B. Blampey, R. Gras, C. Bermond, B. Fléchet, J. Torres
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引用次数: 1

摘要

随着22nm节点集成电路的技术发展,集成和工艺问题将对互连上的信号传播至关重要。气隙结构作为多孔介质的潜在替代品,因此分析了两种SiO2牺牲方法。通过电磁和时域仿真,实现了势垒特性的提取以及电容、延迟和串扰参数的尺寸限制,从而提出了一种特定的堆栈作为该问题的全局解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance predictions of prospective air gap architectures for the 22 nm node
With technological developments towards 22 nm node ICs, integration and process issues will be critical for signal propagation on interconnects. Air gap architecture, as a potential alternative to porous dielectrics, is thus analyzed for two SiO2 sacrificial approaches. Thanks to electromagnetic and time-domain simulations, extraction of barrier properties and dimensions limits regarding capacitance, delay and crosstalk parameters is realized, leading to the proposal of a specific stack as a global solution to this problematic.
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