用于高迁移率锗锡场效应晶体管的具有增强热稳定性的金属双锗酰胺触点

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210151

Lanxiang Wang, G. Han, S. Su, Qian Zhou, Yue Yang, P. Guo, Wei Wang, Y. Tong, P. S. Lim, C. Xue, Qiming Wang, B. Cheng, Y. Yeo

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引用次数: 4

摘要

我们报道了一种新型的高迁移率锗锡(Ge0.947Sn0.053或GeSn)沟道p- mosfet的金属双锗化接触金属化工艺。采用镍铂(NiPt)合金与GeSn反应，在外延Ge0.947Sn0.053上形成Ni和Pt双格manide [NiGeSn+Ptx(GeSn)y]多相触点。在350 ~ 550℃的N2条件下，对GeSn/Ge(100)上共溅射的Ni和Pt进行快速热退火，形成双锗酰胺。与双胍化镍(NiGeSn)触点相比，加入pt的触点(即NiGeSn+Ptx(GeSn)y)在较宽的地层温度范围内表现出更强的热稳定性。

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Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

We report a novel metal stanogermanide contact metallization process for high-mobility germanium-tin (Ge_0.947Sn_0.053 or GeSn) channel p-MOSFETs. Nickel-Platinum (NiPt) alloy was used to react with GeSn to form a multi-phase Ni and Pt stanogermanide [NiGeSn+Pt_x(GeSn)_y] contact on epitaxial Ge_0.947Sn_0.053. Rapid thermal annealing of co-sputtered Ni and Pt on GeSn/Ge (100) at temperatures from 350 °C to 550 °C in N₂ was used for the stanogermanide formation. Compared with nickel stanogermanide (NiGeSn) contact, the Pt-incorporated contact, i.e. NiGeSn+Pt_x(GeSn)_y, exhibits enhanced thermal stability in a wide range of formation temperatures.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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