在超薄BESOI上制造的高性能CMOS具有低于10 nm的ttv

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344562

S. S. Iyer, M. Tejwani, P. Pitner, T. Sedgwick, G. Shahidi

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引用次数: 3

摘要

厚度范围为75至100 nn的超薄键合和反蚀刻绝缘体硅(BESOI)为CMOS和BiCMOS技术的性能提升提供了潜力。然而，为了有用，非常低的总厚度变化(ttv)是可取的，通常低于10纳米。SIMOX可以获得较高的均匀性，但其残余缺陷密度较高。最近，一种基于等离子体的减薄工艺在将传统键合SOI晶圆减薄到超薄高ttv尺寸方面取得了令人印象深刻的成果。

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High-performance CMOS fabricated on ultrathin BESOI with sub-10 nm ttv

Ultra thin Bond and Etch-back Silicon On Insulator (BESOI) in the thickness range of 75 to 100 nn offers the potential for performance enhancement in both CMOS and BiCMOS technology. To be useful, however, a very low total thickness variation (ttv) is desirable, typically below 10 nm. SIMOX can obtain high uniformity, but has high residual defect densities. Recently, a plasma-based thinning process has been able to demonstrate impressive results in thinning conventional bonded SOI wafers to ultra thin high ttv dimensions.<>

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Proceedings of 1993 IEEE International SOI Conference

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