纳米mosfet中交流随机电报噪声的新观察

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210146

Runsheng Wang, Jibin Zou, Xiaoqing Xu, Changze Liu, Jinhua Liu, Hanming Wu, Yangyuan Wang, Ru Huang

{"title":"纳米mosfet中交流随机电报噪声的新观察","authors":"Runsheng Wang, Jibin Zou, Xiaoqing Xu, Changze Liu, Jinhua Liu, Hanming Wu, Yangyuan Wang, Ru Huang","doi":"10.1109/VLSI-TSA.2012.6210146","DOIUrl":null,"url":null,"abstract":"The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC signals in digital circuits, it is essential to investigate the AC RTN at dynamic voltage, instead of traditional DC RTN at fixed gate bias. In this paper, the AC RTN in nano-MOSFETs is experimentally studied in detail, with the focus on the time domain. Various RTN parameters are investigated, in terms of frequency dependence and bias dependence, which are important for robust circuit design against RTN.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs\",\"authors\":\"Runsheng Wang, Jibin Zou, Xiaoqing Xu, Changze Liu, Jinhua Liu, Hanming Wu, Yangyuan Wang, Ru Huang\",\"doi\":\"10.1109/VLSI-TSA.2012.6210146\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC signals in digital circuits, it is essential to investigate the AC RTN at dynamic voltage, instead of traditional DC RTN at fixed gate bias. In this paper, the AC RTN in nano-MOSFETs is experimentally studied in detail, with the focus on the time domain. Various RTN parameters are investigated, in terms of frequency dependence and bias dependence, which are important for robust circuit design against RTN.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210146\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210146","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

随机电报噪声(RTN)已成为影响纳米级mosfet可变性和可靠性的关键问题。由于数字电路中的器件实际上是在交流信号下工作的，因此有必要研究动态电压下的交流RTN，而不是传统的固定栅极偏置下的直流RTN。本文对纳米mosfet中的交流RTN进行了详细的实验研究，重点是在时域上。研究了各种RTN参数的频率依赖性和偏置依赖性，这对抗RTN的鲁棒电路设计很重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs

The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC signals in digital circuits, it is essential to investigate the AC RTN at dynamic voltage, instead of traditional DC RTN at fixed gate bias. In this paper, the AC RTN in nano-MOSFETs is experimentally studied in detail, with the focus on the time domain. Various RTN parameters are investigated, in terms of frequency dependence and bias dependence, which are important for robust circuit design against RTN.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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