一种具有优异雪崩性能的新型功率MOSFET

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856841

T. Uesugi, T. Suzuki, T. Murata, S. Kawaji, H. Tadano

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引用次数: 2

摘要

本文探讨了一种提高功率MOSFET雪崩性能的新概念。其原理是使寄生双极晶体管在整个芯片上打开，并抑制击穿电流拥挤。应用这种新概念的UMOSFET的雪崩能力为1500兆焦耳。该值比传统的UMOSFET高一个数量级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new power MOSFET having excellent avalanche capability

In this paper, we explore a new concept for improvement of an avalanche capability of a power MOSFET. The concept is to make parasitic bipolar transistors in all over the chip turn on, and to suppress breakdown current crowding. The avalanche capability of an UMOSFET applied this new concept was 1500 mJ. This value was about one order higher than that of a conventional UMOSFET.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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