高效率氮化镓HEMT e波段功率放大器，输出功率1.8W

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2020-10-23 DOI:10.1109/ICICM50929.2020.9292182

Peng Xu, Zhiqun Cheng, Zhiwei Zhang, MingWen Meng

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引用次数: 1

摘要

提出了一种栅极长度为60nm的基于GaN高电子迁移率晶体管(HEMT)的四级e波段功率放大器单片微波集成电路(MMIC)。电路布局表明，该电路在e频段低频(71 ~ 76ghz)的小信号增益为21 ~ 23db，功率附加效率(PAE)为25.5% ~ 27.5%。饱和输出功率大于32.6dBm(1.8W)，功率增益大于12.6 dB，线性功率增益大于20dB。在最后阶段达到约1.4W/mm的功率密度。

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High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power

This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21–23dB and power added efficiency(PAE) of 25.5%–27.5% in the E-band low frequency (71–76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.

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2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)

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