6-3基于NBTI、TDDS和RTN实验的基准电荷捕获模型

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241593

S. Bhagdikar, S. Mahapatra

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引用次数: 0

摘要

对文献中已有的电荷捕获模型进行了系统的回顾和比较。建立了一个模拟空穴捕获/去捕获动力学的框架，以计算产生的阈值电压退化($\Delta \mathrm{V}_{\mathrm{HT}})$)和捕获-发射时间常数($\tau_{C}-\tau_{E}$)。利用负偏置温度不稳定性(NBTI)、随机电报噪声(RTN)和时间相关缺陷谱(TDDS)实验数据对模型进行了分析。

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6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments

A systematic review and comparison of existing charge trapping models in literature is performed. A framework for simulating hole trapping/de-trapping kinetics is established to compute resultant threshold voltage degradation ($\Delta \mathrm{V}_{\mathrm{HT}})$ and capture-emission time constants ($\tau_{C}-\tau_{E}$). The models are analyzed by using data from Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments.

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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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