电子遮蔽损伤中的离子轨道

T. Madziwa-Nussinov, D. Arnush, F.F. Chen
{"title":"电子遮蔽损伤中的离子轨道","authors":"T. Madziwa-Nussinov, D. Arnush, F.F. Chen","doi":"10.1109/PPID.2003.1200926","DOIUrl":null,"url":null,"abstract":"In Hashimoto's' hypothetical mechanism for electron shading damage, the photoresist at the tops of trenches and vias collects a negative charge from the thermal electrons, creating an electric field (E-field) which prevents electrons from reaching the trench bottom, where a \"collector\" is located. The ions, accelerated by the sheath electric field, are driven straight into the trench and impinge on the collector, charging it positive if it is isolated. The electric fields inside the trench can also deflect the ions into the sidewalls, causing notching and other deformations of the etch profile The present effort aims to test the hypothesis by scaling the submicron features to macroscopic size so that the currents and potentials inside the trench can be measured and compared with computations. This paper concerns the theoretical part of the work; namely, self-consistent computations of the E-fields and ion orbits inside the trenches.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ion orbits in electron shading damage\",\"authors\":\"T. Madziwa-Nussinov, D. Arnush, F.F. Chen\",\"doi\":\"10.1109/PPID.2003.1200926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In Hashimoto's' hypothetical mechanism for electron shading damage, the photoresist at the tops of trenches and vias collects a negative charge from the thermal electrons, creating an electric field (E-field) which prevents electrons from reaching the trench bottom, where a \\\"collector\\\" is located. The ions, accelerated by the sheath electric field, are driven straight into the trench and impinge on the collector, charging it positive if it is isolated. The electric fields inside the trench can also deflect the ions into the sidewalls, causing notching and other deformations of the etch profile The present effort aims to test the hypothesis by scaling the submicron features to macroscopic size so that the currents and potentials inside the trench can be measured and compared with computations. This paper concerns the theoretical part of the work; namely, self-consistent computations of the E-fields and ion orbits inside the trenches.\",\"PeriodicalId\":196923,\"journal\":{\"name\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPID.2003.1200926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1200926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在桥本的假设的电子遮阳损伤机制中,沟槽和通孔顶部的光刻胶从热电子中收集负电荷,形成一个电场(e场),阻止电子到达沟槽底部,那里有一个“收集器”。离子在鞘层电场的加速下,直接被驱动进入沟槽并撞击收集器,如果收集器被隔离,则使其带正电。沟槽内的电场也会使离子偏转到侧壁,导致蚀刻轮廓的缺口和其他变形。目前的努力旨在通过将亚微米特征缩放到宏观尺寸来验证这一假设,以便可以测量沟槽内的电流和电位,并与计算进行比较。本文主要是研究工作的理论部分;即自洽计算壕内的电场和离子轨道。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ion orbits in electron shading damage
In Hashimoto's' hypothetical mechanism for electron shading damage, the photoresist at the tops of trenches and vias collects a negative charge from the thermal electrons, creating an electric field (E-field) which prevents electrons from reaching the trench bottom, where a "collector" is located. The ions, accelerated by the sheath electric field, are driven straight into the trench and impinge on the collector, charging it positive if it is isolated. The electric fields inside the trench can also deflect the ions into the sidewalls, causing notching and other deformations of the etch profile The present effort aims to test the hypothesis by scaling the submicron features to macroscopic size so that the currents and potentials inside the trench can be measured and compared with computations. This paper concerns the theoretical part of the work; namely, self-consistent computations of the E-fields and ion orbits inside the trenches.
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