4500v双沟槽MOS控制晶闸管分析

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515026

A.Q. Huang, G. Amaratunga, D. Chen

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引用次数: 7

摘要

提出并分析了新型高压MOS控制晶闸管(MCT)结构。结果表明，双沟槽MCT(DTMCT)的关断能力比单沟槽MCT(TMCT)提高了4倍，关断损耗降低了5倍，而两者的正向阻断电压均为4500 V。这些结果，结合晶闸管工作提供的优秀正向载流能力，对DTMCT开发用于非常高电压低损耗应用是令人鼓舞的。

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Analysis of 4500 V double trench MOS controlled thyristor

Novel high voltage MOS controlled thyristor (MCT) structures are proposed and analysed. It was found that the double trench MCT(DTMCT) increases the turn-off capability by a factor of 4 and reduces the turn-off loss by a factor of 5 compared with single trench gate MCT(TMCT) while both have a forward blocking voltage of 4500 V. These results, combined with the excellent forward current carrying capability provided by thyristor operation, are encouraging for the DTMCT to be developed for very high voltage low loss applications.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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