有源聚合物器件的EBIC研究

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378088

A. Pugatschow, R. Heiderhoff, M. Forster, U. Scherf, L. Balk

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引用次数: 1

摘要

EBIC显微镜首次应用于活性聚合物器件的研究，以tpa -二甲基和P3HT聚合物为活性层的ofet。这些器件的内部电场分布与偏置条件有关。证明了源和漏接点的普尔-弗兰克尔场依赖关系。

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EBIC Investigations on Active Polymer Devices

For the first time, EBIC microscopy is applied for investigations on active polymer devices, OFETs with TPA-Dimethyl and P3HT polymers as active layers. The internal electrical field distributions of these devices are characterized in dependence on biasing conditions. Poole-Frenkel field dependences at source and drain contacts are demonstrated.

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来源期刊

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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