{"title":"包含各向异性输运性质的半导体漂移-扩散方程的鲁棒有限元向量公式","authors":"C. M. Johnson, J. Trattles","doi":"10.1109/SISPAD.1996.865310","DOIUrl":null,"url":null,"abstract":"In this paper, a new finite element vector formulation of the drift-diffusion model, including anisotropic effects, is introduced. Stability criteria for the model are described and a methodology is presented for providing stable solutions for spatial discretisations that include both acute and obtuse triangles, including cases where there is a large stretching of the element.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A robust finite element vector formulation of the semiconductor drift-diffusion equations incorporating anisotropic transport properties\",\"authors\":\"C. M. Johnson, J. Trattles\",\"doi\":\"10.1109/SISPAD.1996.865310\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new finite element vector formulation of the drift-diffusion model, including anisotropic effects, is introduced. Stability criteria for the model are described and a methodology is presented for providing stable solutions for spatial discretisations that include both acute and obtuse triangles, including cases where there is a large stretching of the element.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865310\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865310","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A robust finite element vector formulation of the semiconductor drift-diffusion equations incorporating anisotropic transport properties
In this paper, a new finite element vector formulation of the drift-diffusion model, including anisotropic effects, is introduced. Stability criteria for the model are described and a methodology is presented for providing stable solutions for spatial discretisations that include both acute and obtuse triangles, including cases where there is a large stretching of the element.