稀释湿氧化:超薄栅氧化形成的新技术

1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI:10.1109/ISSM.1997.664621

Y. Tanabe, Y. Nakatsuka, S. Sakai, T. Miyazaki, T. Nagahama

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引用次数: 3

摘要

为满足深亚微米器件工艺对高质量栅极氧化物的需求，研制了一种与RTP湿式氧化兼容的超纯水蒸气发生器。该发生器基于氢气和氧气的催化表面反应，能够精确控制加工气体中H/sub 2/O/O/sub 2/的比例，达到任何所需的百分比。稀释湿式氧化(DWO)利用水蒸气发生器精确控制的低H/sub 2/O/O/sub 2/比率，获得与干式氧化相当的低氧化率，从而在保持湿式氧化的膜特性的同时获得准确的膜厚度。

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Diluted wet oxidation: a novel technique for ultra thin gate oxide formation

An ultra-pure water vapor generator that is compatible with RTP wet oxidation has been developed to meet the need for high quality gate oxides in deep sub-micron device process. This generator is based on a catalytic surface reaction of hydrogen gas and oxygen gas, and enables a precise control of H/sub 2/O/O/sub 2/ ratio in the processing gas at any desired percentage. Diluted Wet Oxidation (DWO) utilizes a low H/sub 2/O/O/sub 2/ ratio precisely controlled by the water vapor generator to obtain a low oxidation rate comparable to dry oxidation, which results in an accurate film thickness while maintaining the film characteristics of wet oxidation.

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来源期刊

1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)

CiteScore

0.80

自引率

0.00%

发文量