大功率4H-SiC静电感应晶体管

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499213

R. Siergiej, R. C. Clarke, A.K. Aganval, C. Brandt, A. Burk, A. Morse, P. A. Orphanos

{"title":"大功率4H-SiC静电感应晶体管","authors":"R. Siergiej, R. C. Clarke, A.K. Aganval, C. Brandt, A. Burk, A. Morse, P. A. Orphanos","doi":"10.1109/IEDM.1995.499213","DOIUrl":null,"url":null,"abstract":"Static induction transistors have been demonstrated in 4H-SiC. SiC specific semiconductor processing technologies such as epitaxy, reactive ion etching, and sidewall Schottky gates were employed. Under pulsed power test conditions, 4H-SiC SITs developed a maximum output power of 225 W at 600 MHz, a power added efficiency of 47%, and a gain of 8.7 dB. Maximum channel current was 1 A/cm, and the maximum blocking voltage was 200 V.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"240 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"High power 4H-SiC static induction transistors\",\"authors\":\"R. Siergiej, R. C. Clarke, A.K. Aganval, C. Brandt, A. Burk, A. Morse, P. A. Orphanos\",\"doi\":\"10.1109/IEDM.1995.499213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Static induction transistors have been demonstrated in 4H-SiC. SiC specific semiconductor processing technologies such as epitaxy, reactive ion etching, and sidewall Schottky gates were employed. Under pulsed power test conditions, 4H-SiC SITs developed a maximum output power of 225 W at 600 MHz, a power added efficiency of 47%, and a gain of 8.7 dB. Maximum channel current was 1 A/cm, and the maximum blocking voltage was 200 V.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"240 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 26

摘要

静电感应晶体管已经在4H-SiC上得到了验证。SiC特定的半导体加工技术，如外延、反应离子蚀刻和侧壁肖特基门被采用。在脉冲功率测试条件下，4H-SiC sit在600 MHz下的最大输出功率为225 W，功率增加效率为47%，增益为8.7 dB。通道最大电流为1 A/cm，最大阻断电压为200 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High power 4H-SiC static induction transistors

Static induction transistors have been demonstrated in 4H-SiC. SiC specific semiconductor processing technologies such as epitaxy, reactive ion etching, and sidewall Schottky gates were employed. Under pulsed power test conditions, 4H-SiC SITs developed a maximum output power of 225 W at 600 MHz, a power added efficiency of 47%, and a gain of 8.7 dB. Maximum channel current was 1 A/cm, and the maximum blocking voltage was 200 V.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of International Electron Devices Meeting

自引率

0.00%

发文量