SEU/SRAM作为过程监视器

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292893

B. Blaes, M. Buehler

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引用次数: 8

摘要

SEU/SRAM是一种4b静态随机存取存储器(SRAM)，设计用于检测由高能粒子产生的单事件扰动(SEU)。该装置用于测定记忆细胞中自发翻转电位的分布。该电位的变化被确定为由于n-MOSFET阈值电压的变化。对于1.2 μ m CMOS工艺，发现标准偏差为8mv。利用累积分布和残差图，可以很容易地识别出粘滞细胞和非正态分布细胞。

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SEU/SRAM as a process monitor

The SEU/SRAM is a 4-b static random access memory (SRAM) designed to detect single-event upsets (SEUs) produced by high energy particles. This device is used to determine the distribution in the memory cell spontaneous flip potential. The variance in this potential is determined to be due to the variation in the n-MOSFET threshold voltage. For a 1.2- mu m CMOS process, the standard deviation is found to be 8 mV. Using cumulative distribution and residual plots, stuck cells and nonnormally distributed cells are easily identified.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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