1.5 /spl mu/m模拟BiCMOS/DMOS工艺，适用于高达50 V的中压和电流功率ic应用

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493884

M. El-Diwany, J. McGregor, E. Demirliogiu, R. Huang

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引用次数: 2

摘要

ABCD150是1.5 /spl mu/m模拟BiCMOS/DMOS工艺。它解决了中压和高达50 V的电流应用的功率ic。功率MOS晶体管有四种类型;低压MOS;高压MOS;垂直DMOS结构;HV横向DMOS。每个都针对最小特定电阻R/sub /(on) (in /spl Omega/)进行了优化。Mm /sup 2/)在各自的工作电压下。

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1.5 /spl mu/m analog BiCMOS/DMOS process for medium voltage and current power ICs applications up to 50 V

ABCD150 is a 1.5 /spl mu/m analog BiCMOS/DMOS process. It addresses power ICs for medium voltage and current applications up to 50 V. Four types of power MOS transistors are available; low voltage MOS; high voltage MOS; vertical DMOS; and HV lateral DMOS. Each is optimized for minimum specific on resistance R/sub ds/(on) (in /spl Omega/.mm/sup 2/) at their respective operating voltages.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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