H. Yu, M. Schaekers, A. Hikavyy, E. Rosseel, A. Peter, K. Hollar, F. Khaja, W. Aderhold, L. Date, A. Mayur, J. lee, K. Shin, B. Douhard, S. Chew, S. Demuynck, S. Kubicek, D. Kim, A. Mocuta, K. Barla, N. Horiguchi, N. Collaert, A. Thean, K. De Meyer
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Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation
Following the previous study on Si:P [1], we also achieve ultralow contact resistivities (ρc) of ~2×10-9 Ω·cm2 on Si0.3Ge0.7:B using the same Ti based pre-contact amorphization (PCAI) plus post-metal anneal (PMA) technique. Similar as on Si:P, low-energy PCAI provides the lowest ρc on SiGe:B. By increasing the B concentration, the PMA temperature required on SiGe:B also matches with that on Si:P. A simple Ti based CMOS contact flow is thus proposed. Several B doping and activation methods on SiGe:B are also compared in this work.
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