基于HfO2的RRAM具有优越的灯丝形成控制，可实现+/−1V下1µA至20µA的高性能低功耗工作

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210102

D. Gilmer, S. Koveshnikov, B. Butcher, G. Bersuker, A. Kalantarian, M. Sung, R. Geer, Y. Nishi, P. Kirsch, R. Jammy

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引用次数: 8

摘要

在高密度存储单元阵列中，低功耗RRAM器件需要低工作电流和低电压范围。在这项工作中，我们首次展示了TiN/HfOx/Zr/W RRAM器件的1ua， +/- 1V双极开关。通过识别和利用控制导电丝形成的关键参数，实现了低功率下高达108次的高开关性能，并将高阻状态电流降低了100倍。

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Superior filament formation control in HfO2 based RRAM for high-performance low-power operation of 1 µA to 20 µA at +/− 1V

Low operation current and voltage range are required for scaled low power RRAM devices in high density memory cell arrays. In this work, for the first time we demonstrate 1 uA, +/- 1V bipolar switching of TiN/HfOx/Zr/W RRAM devices. High switching performance up to 108 cycles at low power and a 100× reduction of the high-resistance-state current was achieved by identification and utilization of key parameters for establishing superior control of the conductive filament formation.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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