超薄体In0.7Ga0.3As-on-nothing N-MOSFET，采用新的自对准空腔形成技术，具有Pd-InGaAs源极/漏极触点

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210149

X. Gong, Zhu Zhu, E. Kong, Ran Cheng, S. Subramanian, K. Goh, Y. Yeo

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引用次数: 2

摘要

我们报告了超薄体In0.7Ga0.3As-on-nothing N-MOSFET的演示，其中在沟道层正下方形成了自对准腔。集成了自对准Pd-InGaAs源/漏(S/D)触点。自对准触点的栅极长度LG最小，为130 nm。通过III-V-on-nothing器件结构有效地降低了亚表面漏电流，实现了248mv /V的DIBL和135mv /decade的SS。

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Ultra-thin-body In0.7Ga0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology

We report the demonstration of an ultra-thin-body In0.7Ga0.3As-on-nothing N-MOSFET where a self-aligned cavity is formed right beneath the channel layer. Self-aligned Pd-InGaAs source/drain (S/D) contacts were integrated. The gate length LG of 130 nm is the smallest achieved with self-aligned contacts. With effective reduction of subsurface leakage current by the III-V-on-nothing device structure, DIBL of 248 mV/V and SS of 135 mV/decade were achieved.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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