介绍半导体生产环境中的红外光谱椭偏仪

P. Weidner, U. Mantz, P.Y. Guittet, R. Wienhold, M. Rimane, J. Stehle, P. Boher, M. Bucchia
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引用次数: 2

摘要

IRSE提出了一种补充类型的表征,以广泛接受的UV-VIS椭偏法。IRSE对吸收带(分子的振动和旋转状态)和自由载流子敏感。由于粗糙度或非常小的cd, IRSE还降低了对散射的灵敏度。我们在这里展示一个集成在洁净室1级的IRSE生产工具:SOPRA IRSE200。我们的第一个目标是评估IRSE的能力,以便更好地监测薄涂层(20 nm-120 nm)厚度的灵敏度、稳定性和吞吐量。针对这个主题制定了一个生产策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Introduction of infrared spectroscopic ellipsometry in a semiconductor production environment
IRSE proposes a complementary type of characterization to widely accepted UV-VIS ellipsometry. IRSE is sensitive to absorption bands (vibrational and rotational states of molecules) and free carriers. IRSE reduces also sensitivity to scattering due to roughness or very small CDs. We present here an IRSE production tool integrated in clean-room class 1: the SOPRA IRSE200. Our first objective is to assess IRSE capabilities for better sensitivity, stability and throughput for thin epilayers (20 nm-120 nm) thickness monitoring. A production strategy is developed on this topic.
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