{"title":"背面激光技术在失效分析中的应用","authors":"W. Hoe, R. Lin, C. H. Chong, Coswin Lin","doi":"10.1109/IPFA.2007.4378099","DOIUrl":null,"url":null,"abstract":"The application of backside emission and laser technique (TIVA/OBIRCH) had been widely used in the semiconductor industry. This paper will discuss the usage of backside laser damage method to aid in this technique on localizing the failure spot. Two applications on backside laser; 1.Memory scramble verification and 2. Yield loss scenario using backside laser to verify the failure hypothesis will also be discussed.","PeriodicalId":334987,"journal":{"name":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Application of Back-side Laser Technique on Failure Analysis\",\"authors\":\"W. Hoe, R. Lin, C. H. Chong, Coswin Lin\",\"doi\":\"10.1109/IPFA.2007.4378099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The application of backside emission and laser technique (TIVA/OBIRCH) had been widely used in the semiconductor industry. This paper will discuss the usage of backside laser damage method to aid in this technique on localizing the failure spot. Two applications on backside laser; 1.Memory scramble verification and 2. Yield loss scenario using backside laser to verify the failure hypothesis will also be discussed.\",\"PeriodicalId\":334987,\"journal\":{\"name\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2007.4378099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2007.4378099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application of Back-side Laser Technique on Failure Analysis
The application of backside emission and laser technique (TIVA/OBIRCH) had been widely used in the semiconductor industry. This paper will discuss the usage of backside laser damage method to aid in this technique on localizing the failure spot. Two applications on backside laser; 1.Memory scramble verification and 2. Yield loss scenario using backside laser to verify the failure hypothesis will also be discussed.