灯加热下新型LPCVD沉积多晶硅膜的力学和电学特性

MHS'99. Proceedings of 1999 International Symposium on Micromechatronics and Human Science (Cat. No.99TH8478) Pub Date : 1999-11-23 DOI:10.1109/MHS.1999.819989

T. Ueda, K. Kuribayashi, S. Hasegawa

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引用次数: 0

摘要

通过对新型LPCVD装置沉积的多晶硅膜的冶金性能分析，证明了采用灯加热的LPCVD装置可以获得与传统LPCVD装置相同的用于微机械的多晶硅膜。然而，当使用该装置沉积的多晶硅薄膜生产微机械时，有必要了解薄膜的机械和电气特性。因此，本文描述了用新型LPCVD装置沉积的多晶硅的杨氏模量、电阻率和规系数的分析。

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Mechanical and electrical characteristics of polysilicon film deposited by new LPCVD using lamp heating

The newly developed LPCVD apparatus using lamp heating was shown to be valid for obtaining the same polysilicon film for micromachines as that produced by the conventional LPCVD apparatus, by analysing the metallurgical properties of the polysilicon film deposited by the new LPCVD apparatus. However, when producing a micromachine using the polysilicon film deposited with this apparatus, it is necessary to know the mechanical and electrical characteristics of the film. Therefore, this report describes the analysis of Young's modulus, resistivity and gauge factor of polysilicon deposited by the new LPCVD apparatus.

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MHS'99. Proceedings of 1999 International Symposium on Micromechatronics and Human Science (Cat. No.99TH8478)

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