低功耗和低面积CMOS电容倍增器

2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI:10.1109/SMICND.2018.8539846

G. Bonteanu, A. Cracan

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引用次数: 1

摘要

提出了一种低功耗、低面积电压模式CMOS电容倍增技术。倍增系数方便地由两个晶体管的跨导比给出，从而提高了对工艺和温度变化的抗扰性。介绍了一种低功率宽范围可调弛豫振荡器的应用。

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Low Power and Low Area CMOS Capacitance Multiplier

A low power and low area voltage mode CMOS capacitance multiplication technique is presented. The multiplication factor is conveniently given by the transconductance ratio of two transistors, thereby improving the immunity to process and temperature variations. A low power wide range adjustable relaxation oscillator is presented as application.

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来源期刊

2018 International Semiconductor Conference (CAS)

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